TIG110BF

www.DataSheet.co.kr Ordering number : EN9013A TIG110BF SANYO Semiconductors DATA SHEET TIG110BF Features N-Channel Non Punch Through IGBT High Power High Speed Switching Applications Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VCES VGES ICc*1 IC*2 ICP PD Tj Tstg Limited by Tjmax Limited by Tjmax @Tc=25°C*3 @Tc=100°C*3 Conditions Ratings 600 ±30 27 14 6 108 2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 30 150 -55 to +150 Unit V V A A A A W W °C °C Pulse width Limited by Tjmax Note : *1 Shows chip capability *2 Collector current is calculated from the following for mula Tjmax - TC IC(TC)= Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC)) *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7509-005 10.0 3.2 3.5 7.2 4.5 2.8 Product & Package Information Package : TO-220FI(LS) JEITA, JEDEC : SC-67, SOT-186A, TO-220F Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine Marking Electrical Connection 2 16.1 16.0 0.6 TIG110 LOT No. 0.9 1.2 0.75 14.0 3.6 1.2 0.7 1 1 2 3 2.4 1 : Gate 2 : Collector 3 : ...