TN5D61A

www.DataSheet.co.kr Ordering number : ENA1240 TN5D61A SANYO Semiconductors DATA SHEET TN5D61A Features ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (24V Output type) High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). Over current protection function (Self recovery type). Under voltage protection function. Over temperature protection function (Self recovery type). Soft start function (Variable subject to externally-connected capacitor). Stand-by mode function (Compatible with soft start terminal). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Maximum Input Voltage Maximum Output Current Drain-to-Source Voltage of built-in MOSFET Drain Current of built-in MOSFET (DC) Drain Current of built-in MOSFET (Pulse) FB Pin Maximum Input Voltage SS Pin Maximum Input Voltage Allowable Power Dissipation Operating Temperature Junction Temperature Storage Temperature Symbol VIN max IO max VDSS ID IDP Vfb VSS PD Topr Tj Tstg Tc=25°C PW≤10μs, duty cycle≤1% Conditions Ratings 57 5 --60 --9 --36 30 7 2.0 15 --25 to +125 150 --55 to +150 Unit V A V A A V V W W °C °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be inten...