N-Channel and P-Channel Silicon MOSFETs
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Ordering number : ENA0933
VEC2601
SANYO Semiconductors
DATA SHEET
VEC2601
Features
•
N-Channel...
Description
www.DataSheet.co.kr
Ordering number : ENA0933
VEC2601
SANYO Semiconductors
DATA SHEET
VEC2601
Features
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Best suited for load switches. 2.5V drive. 0.75mm mount high.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Conditions N-channel 30 ±10 0.15 0.6 0.9 150 --55 to +150 P-channel -20 ±10 --3 -12 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA 30 1 ±10 0.4 0.15 0.22 1.3 V µA µA V S Symbol Conditions Ratings min typ max Unit
Marking : BD
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, c...
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