VEC2603

www.DataSheet.co.kr Ordering number : ENA0934 VEC2603 SANYO Semiconductors DATA SHEET VEC2603 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Best suited for load switches. 1.8V drive. 0.75mm mount high. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Conditions N-channel 30 ±10 0.15 0.6 0.9 150 --55 to +150 P-channel -12 ±8 --4 -16 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA 30 1 ±10 0.4 0.15 0.22 1.3 V µA µA V S Symbol Conditions Ratings min typ max Unit Marking : BF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, co...