VEC2606

www.DataSheet.co.kr Ordering number : ENA0856 VEC2606 SANYO Semiconductors DATA SHEET VEC2606 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Best suited for inverter applications. Low ON-resistance. The VEC2606 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 60 ±20 2 8 0.9 1.0 150 --55 to +150 P-channel -60 ±20 --1.5 --6 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A 60 1 ±10 1.2 1.44 2.4 2.6 V µA µA V S Symbol Conditions Ratings min typ max Unit Marking : BX Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electro...