VEC2905

www.DataSheet.co.kr Ordering number : ENA1045 VEC2905 SANYO Semiconductors DATA SHEET VEC2905 Features PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Composite type, facilitatiing high-density mounting. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Collector Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --20 ±10 --3 --12 1.1 150 --55 to +150 V V A A W °C °C VCBO VCEO VECO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --30 --30 --6.5 --5 --3 --5 --600 1.1 150 --55 to +150 V V V V A A mA W °C °C Symbol Conditions Ratings Unit Marking : AJ Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special app...