Document
MMBT2222AT
Plastic-Encapsulate Transistors NPN Silicon
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
COLLECTOR 3
1 BASE
2 EMITTER
Symbol VCEO VCBO VEBO
IC
1 2
3
SC-89 (SOT-523F)
Value 40 75
6.0 600
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
DEVICE MARKING
MMBT2222AT=1P
Symbol
PD RθJA TJ,Tstg
Max
150 833 -55 to +150
Unit mW
C/W C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)(2) Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Base Cutoff Current (VCE= 60 Vdc, VEB= 3.0 V) Collector Cutoff Current (VCE= 60 Vdc, VEB= 3.0 V)
V(BR)CEO 40
-
V
V(BR)CBO 75
-
V
V(BR)EBO 6.0
-
V
IBL - 20 nA
I.