GA100NA60UP

www.DataSheet.co.kr GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolated package (2500 V AC/RMS) Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial market SOT-227 BENEFITS PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V 100 A 1.8 V Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, welding, induction heating Lower overall losses available at frequencies  20 kHz Easy to assemble and parallel Direct mounting to heatsink Lower EMI, requires less snubbing Plug in compatible with other SOT-227 packages ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current Pulsed collector current Clamped inductive load current Gate to emitter voltage RMS isolation voltage Maximum power dissipation Operating junction and storage temperature range Mounting torque SYMBOL VCES IC ICM ILM VGE VISOL PD TJ, TStg 6 to 32 or M3 screw Any terminal to case, t = 1 minute TC = 25 °C TC = 100 °C Repetitive rating: VGE = 20 V; pulse width limited by maximum junction temperature (fig. 20) TC = 25 °C TC = 100 °C TEST CONDITIONS MAX. 600 100 50 200 200...