IGBT
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GA100TS60SFPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 ...
Description
www.DataSheet.co.kr
GA100TS60SFPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A
FEATURES
Standard speed PT IGBT technology Standard speed: DC to 1 kHz, optimized for hard switching speed FRED Pt® antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Compliant to RoHS directive 2002/95/EC
INT-A-PAK
Designed for industrial level
BENEFITS PRODUCT SUMMARY
VCES IC DC VCE(on) at 100 A, 25 °C 600 V 220 A 1.11 V
Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Very low junction to case thermal resistance Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current Gate to emitter voltage RMS isolation voltage Maximum power dissipation SYMBOL VCES IC ICM ILM VGE VISOL PD Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C TC = 25 °C TC = 130 °C TEST CONDITIONS MAX. 600 220 100 440 440 ± 20 2500 780 312 V W A UNITS V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS VGE = 0 V, IC = 1 mA VGE = 15 V, IC = 100 A IC = 200 A VGE = 15 V, IC = 100 A, TJ = 125 °C IC = 0.25...
Similar Datasheet
- GA100TS60SFPBF IGBT - Vishay Siliconix