GA200HS60S1PBF

www.DataSheet.co.kr GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A FEATURES Generation 4 IGBT technology Standard: Optimized for hard switching speed DC to 1 kHz Very low conduction losses Industry standard package UL approved file E78996 Compliant to RoHS directive 2002/95/EC INT-A-PAK Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 200 A, 25 °C 600 V 480 A 1.13 V BENEFITS Increased operating efficiency Direct mounting to heatsink Performance optimized as output inverter stage for TIG welding machines ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current Gate to emitter voltage RMS isolation voltage Maximum power dissipation SYMBOL VCES IC ICM ILM VGE VISOL PD Any terminal to case, t = 1 minute TC = 25 °C TC = 85 °C TC = 25 °C TC = 116 °C TEST CONDITIONS MAX. 600 480 200 800 800 ± 20 2500 830 430 V A UNITS V W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES IGES TEST CONDITIONS VGE = 0 V, IC = 1 mA VGE = 15 V, IC = 200 A VGE = 15 V, IC = 200 A, TJ = 125 °C IC = 0.25 mA VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C VGE = ± 20 V MIN. 600 3 TYP. ...