GA75TS120UPBF

www.DataSheet.co.kr GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A FEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED® antiparallel diodes with ultrasoft recovery Industry standard package UL approved file E78996 INT-A-PAK Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 75 A, 25 °C 1200 V 110 A 2.5 V BENEFITS Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, welding Lower EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current See fig. 17 Peak diode forward current Gate to emitter voltage RMS isolation voltage Maximum power dissipation Operating junction temperature range Storage temperature range SYMBOL VCES IC ICM ILM IFM VGE VISOL PD TJ TStg Any terminal to case, t = 1 minute TC = 25 °C TC = 85 °C TC = 25 °C TC = 76 °C Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature TEST CONDITIONS MAX. 1200 110 75 150 150 150 ± 20 V 2500 390 W 200 - 40 to + 150 °C - 40 to + 125 A UNITS V Document Number: 94427 Revision: 03-May-10 For technical questions, contact: [email protected] www.visha...