GB100DA60UP

www.DataSheet.co.kr GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC 600 V 100 A at 61 °C 2.4 V 100 A at 85 °C BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Higher switching frequency up to 150 kHz Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Peak diode forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC ICM ILM IF IFM VGE PD TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 125 85 300 300 160 105 200 ± 20 447 250 W 313 175 2500 V V A UNITS V Power dissipation, diode Isolation voltage PD VISOL Document Number: 93001 R...