GB50YF120N

www.DataSheet.co.kr GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design ECONO2 4PACK RoHS COMPLIANT Speed 8 to 60 kHz Designed and qualified for industrial market BENEFITS PRODUCT SUMMARY VCES IC at TC = 66 °C VCE(on) (typical) 1200 V 50 A 3.49 V Benchmark efficiency for SMPS appreciation in particular HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink space saving PCB solderable terminals Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current See fig. C.T.5 Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Maximum power dissipation (IGBT) Maximum operating junction temperature Storage temperature range Isolation voltage SYMBOL VCES IC ICM ILM IF IFM VGE PD TJ TStg VISOL TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 66 44 150 150 40 25 150 ± 20 330 180 150 - 40 to + 125 AC 2500 (MIN) V W A UNITS V °C V Document Number: 93653 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GB50YF120N Vishay High Power Products IG...