GB75DA120UP

www.DataSheet.co.kr GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Speed 8 kHz to 60 kHz Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES IC DC VCE(on) typical at 75 A, 25 °C 1200 V 75 A at 95 °C 3.3 V BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plug-in compatible with other SOT-227 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC ICM ILM IF VGE PD TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 131 89 200 A 200 59 39 ± 20 658 369 W 240 135 2500 V V UNITS V Power dissipation, diode Isolation voltage PD VISOL Document Number: 93011 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], DiodesAsia@vishay...