Silicon MOSFET. MCH6444 Datasheet

MCH6444 MOSFET. Datasheet pdf. Equivalent


Sanyo Semicon Device MCH6444
www.DataSheet.co.kr
Ordering number : EN8935
MCH6444
SANYO Semiconductors
DATA SHEET
MCH6444
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=75mΩ (typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
35
±20
2.5
10
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7022A-009
2.0
654
0.15
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0 t o 0.02
ZT
1 23
0.65 0.3
123
654
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
http://semicon.sanyo.com/en/network
62911PE TKIM TC-00002620 No.8935-1/4
Datasheet pdf - http://www.DataSheet4U.net/


MCH6444 Datasheet
Recommendation MCH6444 Datasheet
Part MCH6444
Description N-Channel Silicon MOSFET
Feature MCH6444; www.DataSheet.co.kr Ordering number : EN8935 MCH6444 SANYO Semiconductors DATA SHEET MCH6444 Fe.
Manufacture Sanyo Semicon Device
Datasheet
Download MCH6444 Datasheet




Sanyo Semicon Device MCH6444
www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
MCH6444
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=20V, VGS=10V, ID=2.5A
VDS=20V, VGS=10V, ID=2.5A
VDS=20V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=1.5A
RL=10Ω
D VOUT
MCH6444
P.G 50Ω S
min
35
Ratings
typ
1.2
1.7
75
118
143
186
36
22
4.2
4.7
15
5.7
4
0.9
0.7
0.86
max
1
±10
2.6
98
166
201
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
2.5 ID -- VDS
2.0
1.5 3.5V
1.0
3.0V
0.5
VGS=2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT16513
ID -- VGS
5
VDS=10V
4
3
2
1
0
0123456
Gate-to-Source Voltage, VGS -- V IT16514
No.8935-2/4
Datasheet pdf - http://www.DataSheet4U.net/



Sanyo Semicon Device MCH6444
www.DataSheet.co.kr
MCH6444
300 RDS(on) -- VGS
250 ID=0.75A
1.5A
200
150
100
50
Ta=25°C
RDS(on) -- Ta
300
250
200
150
100
VGVSG=S4=V4, .I5DV=,0I.D7=5A0.75A
50 VGS=10V, ID=1.5A
10
0 2 4 6 8 10 12 14 16
10
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT16515
7 VDS=10V
5
3
2
1.0
7
Ta= --25°C75°C
5
3 25°C
2
0.1
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
Drain
SW
Current,
Time
I-D-
-- A
ID
IT16517
100
7
5
VDD=15V
VGS=10V
3
2 td(off)
10
7
5 td(on)
3
2
tf
tr
1.0
0.1
23
10
VDS=20V
9 ID=2.5A
8
5 7 1.0
23
Drain Current,
VGS --
IQDg--
A
5 7 10
IT16519
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Total Gate Charge, Qg -- nC
IT16521
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT16516
IS -- VSD
10
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
0.2 0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT16518
f=1MHz
3
2 Ciss
100
7
5
Coss
3 Crss
2
10
0
5 10 15 20 25 30 35
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT16520
100
7
5
3
2
10 IDP=10A (PW10μs)
7
5
3
2
1.0
7
5
3
2
0.1
7
ID=2.5A
Operation in
is limited by
RthDisSDa(Croenoap)e.ratio1n0(0T1ma0=sm215sm°1Cs0)0μs
5
3 Ta=25°C
2 Single pulse
0.01 When mounted on ceramic substrate (900mm2×0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
5 7100
Drain-to-Source Voltage, VDS -- V IT16511
No.8935-3/4
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