N-Channel and P-Channel Silicon MOSFETs
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Ordering number : EN8758
MCH6663
SANYO Semiconductors
DATA SHEET
MCH6663
Features
•
N-Channel ...
Description
www.DataSheet.co.kr
Ordering number : EN8758
MCH6663
SANYO Semiconductors
DATA SHEET
MCH6663
Features
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
ON-resistance Nch : RDS(on)1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Conditions N-channel 30 ±20 1.8 7.2 0.8 150 --55 to +150 P-channel --30 ±20 --1.5 --6 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7022A-006
0.25 2.0 6 5 4 0 t o 0.02 0.15
Product & Package Information
Package : MCPH6 JEITA, JEDEC : SC-88, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
LOT No. LOT No.
2.1 1.6
XQ
0.25
1 0.65
2
3 0.3
TL
0.85
1
2
3
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Electrical Connection
6 5 4
0.07
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
D0711PE TKIM TC-00002677 No.8758-1/6
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
MCH6663
Electrical Characteristics at Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current...
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