RD1004LS-SB5

www.DataSheet.co.kr Ordering number : ENA1615 RD1004LS-SB5 SANYO Semiconductors DATA SHEET RD1004LS-SB5 Features Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 400 400 10 Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited Sine wave, 10ms single pulse 12 120 150 --55 to +150 Unit V V A A A °C °C IO IF(RMS) IFSM Tj Tstg Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=10A VR=400V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Between the junction part and the case : smoothing current 44 17 6.25 Conditions Ratings min 400 1.3 1.5 100 50 typ max Unit V V μA ns ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned h...