Ultrahigh-Speed Switching Diode
www.DataSheet.co.kr
Ordering number : ENA1208
RD1006LS
SANYO Semiconductors
DATA SHEET
RD1006LS
Features
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D...
Description
www.DataSheet.co.kr
Ordering number : ENA1208
RD1006LS
SANYO Semiconductors
DATA SHEET
RD1006LS
Features
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IOP IFSM Tj Tstg PW≤100μs, duty cycle≤50% Sine wave 10ms Conditions Ratings 600 600 10 40 180 150 --55 to +150 Unit V V A A A °C °C
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Symbol VR VF IR trr IR=1mA IF=10A VR=600V IF=10A, di / dt=100A/μs Conditions Ratings min 600 1.6 100 50 typ max Unit V V μA ns
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati...
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