N-channel Power MOSFET
STL13NM60N
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - produ...
Description
STL13NM60N
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
Features
3 66
*
%RWWRPYLHZ '
3RZHU)/$7[+9
Order code VDS @ Tjmax STL13NM60N 650 V
RDS(on) max. 0.385 Ω
ID 10 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
'
*
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
6
!-V
Order code STL13NM60N
Table 1. Device summary
Marking
Packages
13NM60N
PowerFLAT™ 8x8 HV
Packaging Tape and reel
November 2013
This is information on...
Similar Datasheet