STL24NM60N

www.DataSheet.co.kr STL24NM60N N-channel 600 V, 0.200 Ω , 16 A PowerFLAT™ 8x8 HV MDmesh™ II Power MOSFET Features Type STL24NM60N VDSS @ TJmax 650 V RDS(on) max < 0.215 Ω ID 16 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X(6 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ ' 3 !-V Table 1. Device summary Marking 24NM60N Package PowerFLAT™ 8x8 HV Packaging Tape and reel Order code STL24NM60N November 2011 Doc ID 18363 Rev 2 1/14 www.st.com 14 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Contents STL24NM60N Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision hi...