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SBE812

Sanyo Semicon Device

Rectifier

www.DataSheet.co.kr Ordering number : EN8966 SBE812 SBE812 Applications • Schottky Barrier Diode 60V, 1.0A Rectifie...


Sanyo Semicon Device

SBE812

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Description
www.DataSheet.co.kr Ordering number : EN8966 SBE812 SBE812 Applications Schottky Barrier Diode 60V, 1.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package allows applied sets to be made small and thin. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 60 65 1.0 10 --55 to +125 --55 to +125 Unit V V A A °C °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a)1 Rth(j-a)2 IR=0.2mA IF=1A VR=30V VR=10V, f=1MHz IF=100mA, See specified Test Circuit. Mounted in Cu-foiled area of 1.92mm2!0.03mm on glass epoxy board Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings min 60 0.55 35 10 80 75 0.60 30 typ max Unit V V µA pF ns °C / W °C / W Marking : SA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, o...




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