SBE817

www.DataSheet.co.kr Ordering number : ENA0328 SBE817 SANYO Semiconductors DATA SHEET SBE817 Applications Low IR Schottky Barrier Diode 15V, 2.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features Composite type with 2 low IR SBDs in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.57V). Low reverse current (VR=7.5V, IR max=6μA). Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 15 17 2.0 20 --55 to +125 --55 to +125 Unit V V A A °C °C Marking : SA *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain ...