BUX31

isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 500V (Min)-BUX31B ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUX31 800 BUX31A 900 V BUX31B 1000 VCEO Collector-Emitter Voltage BUX31 400 BUX31A 450 V BUX31B 500 VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX31/A/B · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX31 BUX31A IC= 50mA ; IB= 0 BUX31B VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) ICB...