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BUX31B Dataheets PDF



Part Number BUX31B
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BUX31B DatasheetBUX31B Datasheet (PDF)

isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 500V (Min)-BUX31B ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

  BUX31B   BUX31B


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isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 500V (Min)-BUX31B ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUX31 800 BUX31A 900 V BUX31B 1000 VCEO Collector-Emitter Voltage BUX31 400 BUX31A 450 V BUX31B 500 VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX31/A/B · isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX31 BUX31A IC= 50mA ; IB= 0 BUX31B VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage Collector Cutoff Current BUX31 BUX31A BUX31B Emitter Cutoff Current IC= 4A; IB= 0.8A VCB= 800V; IB= 0 VCB= 800V; IB= 0,TC=125℃ VCB= 900V; IB= 0 VCB= 900V; IB= 0,TC=125℃ VCB= 1000V; IE= 0 VCB= 1000V; IE= 0,TC=125℃ VEB= 8V; IC= 0 hFE DC Current Gain IC= 4A ; VCE= 3V BUX31/A/B MIN TYP. MAX UNIT 400 450 V 500 1.0 V 2.0 V 1.3 V 0.1 1.0 0.1 1.0 mA 0.1 1.0 2 mA 8 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


BUX31A BUX31B BUX32


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