IRLZ24S

www.DataSheet.co.kr IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 18 4.5 12 Single D FEATURES 60 0.10 Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive RDS (on) Specified at VGS = 4 V and 5 V 175°C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ24L, SiHLZ24L) is available for low-profile application. I2PAK (TO-262) SiHLZ24L-GE3 IRLZ24LPbF SiHLZ24L-E3 I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G G D S D S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHLZ24S-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Cont...