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New Product
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB ITO-220AB
FEATURES
• Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, ITO-220AB package) • AEC-Q101 qualified 40 s (for TO-220AB and
2 MBR25HxxCT
PIN 1 PIN 3 PIN 2 CASE
3 1 MBRF25HxxCT
PIN 1 PIN 3 PIN 2
2
3
1
TO-263AB K
2 1 MBRB25HxxCT
PIN 1 PIN 2
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
K
HEATSINK
For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF IR TJ max. 2 x 15 A 35 V to 60 V 150 A 0.54 V, 0.60 V 100 μA 175 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC-Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Max. average forward rectified current (fig. 1) total device per diode IF(AV) EAS IFSM IRRM ERSM 1.0 25 SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT VRRM VRWM VDC 35 35 35 45 45 45 30 A 15 80 150 0.5 20 mJ A A mJ 50 50 50 60 60 60 UNIT V V V
Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz Peak non-repetitive reverse energy (8/20 μs waveform)
Document Number: 88789 Revision: 18-Mar-10
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 kΩ Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min SYMBOL VC dV/dt TJ, TSTG VAC MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT 25 10 000 - 65 to + 175 1500 UNIT kV V/μs °C V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR25H35CT MBR25H45CT TYP. IF = 15 A Maximum instantaneous forward voltage per diode IF = 30 A Maximum reverse current at rated VR per diode Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IR (2) VF (1) 0.50 0.63 6.0 MAX. 0.64 0.54 0.74 0.67 100 20 MBR25H50CT MBR25H60CT TYP. 0.56 0.68 4.0 MAX. 0.70 0.60 V 0.85 0.72 100 20 μA mA UNIT
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER Thermal resistance, junction to case per diode SYMBOL RθJC MBR 1.5 MBRF 4.5 MBRB 1.5 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-220AB ITO-220AB TO-263AB TO-263AB
(1)
PREFERRED P/N MBR25H45CT-E3/45 MBRF25H45CT-E3/45 MBRB25H45CT-E3/45 MBRB25H45CT-E3/81 MBR25H45CTHE3/45
(1) (1)
UNIT WEIGHT (g) 1.85 1.99 1.35 1.35 1.85 1.99 1.35 1.35
PACKAGE CODE 45 45 45 81 45 45 45 81
BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel
DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel
MBRF25H45CTHE3/45
MBRB25H45CTHE3/45 (1) MBRB25H45CTHE3/81 (1)
Note AEC-Q101 qualified
www.vishay.com 2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 88789 Revision: 18-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40 MBR, MBRB 30
100
Instantaneous Reverse Leakage Current (mA)
Average Forward Current (A)
10
TJ = 150 °C TJ = 125 °C MBR25H35CT, MBR25H45CT MBR25H50CT, MBR25H60CT
1
20
MBRF
0.1
0.01
10
0.001
TJ = 25 °C
0 0 25 50 75 100 125 150 175
0.0001 0 20 40 60 80 100
Case Temperature (°C)
Percent o.