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MBR40H100WT-F

Vishay Siliconix

High Performance Schottky Generation

www.DataSheet.co.kr MBR40H100WT-F Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 20 A FEATUR...


Vishay Siliconix

MBR40H100WT-F

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www.DataSheet.co.kr MBR40H100WT-F Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 20 A FEATURES Base 4 common cathode 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Fully lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level Anode TO-247AC Anode 2 1 Common 3 cathode APPLICATIONS PRODUCT SUMMARY IF(AV) VR Maximum VF at 20 A at 125 °C 2 x 20 A 100 V 0.67 V High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 20 Apk, TJ = 125 °C (typical, per leg) Range CHARACTERISTICS VALUES 100 0.63 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C MBR40H100WT-F 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 144 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = ...




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