SI2305ADS

www.DataSheet.co.kr New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V Halogen-free Option Available TrenchFET® Power MOSFET 100 % Rg Tested RoHS COMPLIANT APPLICATIONS Load Switch DC/DC Converter TO-236 (SOT-23) S 3 S 2 D G G 1 Top View Si2305ADS (A5)* * Marking Code Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free) Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit -8 ±8 - 5.4 - 4.3 - 4.1a, b - 3.3a, b - 10 - 1.4 - 0.8a, b 1.7 1.1 0.96a, b 0.62a, b - 50 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. TJ, Tstg °C Document Number: 69940 S-82713-Rev. C, 10-Nov-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product Si2305ADS Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta,...