BFU690F

www.DataSheet.co.kr BFU690F NPN wideband silicon RF transistor Rev. 1 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high linearity microwave transistor  High output third-order intercept point 34 dBm at 1.8 GHz  40 GHz fT silicon technology 1.3 Applications     Ka band oscillators DRO’s C-band high output buffer amplifier ZigBee LTE, cellular, UMTS Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors BFU690F NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot hFE CCBS fT Gp(max) NF PL(1dB) Quick reference data Conditions open emitter open base open collector Tsp  90 C IC = 20 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz IC = 60 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 C IC = 60 mA; VCE = 1 V; f = 1.8 GHz; Tamb = 25 C IC = 15 mA; VCE = 2 V; f = 1.8 GHz; S = opt IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ; f = 1.8 GHz; Tamb = 25 C [2] [1] Symbol Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC c...