SI1922EDH

Dual N-Channel 20 V (D-S) MOSFET Si1922EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.198 at VGS = 4.5 V 0.225 at VGS = 2.5 V 0.263 at VGS = 1.8 V ID (A)a 1.3a 1.3a 1.3a Qg (Typ.) 0.9 nC SOT-363 SC-70 (6-LEADS) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Marking Code YY CG XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1922EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Typical ESD Protection 2100 V HBM Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications D1 D2 1k G1 1k G2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 TC = 25 °C 1.3a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 1.3a 1.3a, b, c TA = 70 °C 1.2b, c A Pulsed Drain Current IDM 4 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 1 0.61b, c TC = 25 °C 1.25 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 0.8 0.74b, c W TA = 70 °C 0.47b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady stat...