2SC2458L

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications Unit: mm · High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF (2) = 0.2dB (typ.), 3dB (max) · Complementary to 2SA1048 (L). · Small package. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 50 200 125 -55~125 Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) NF (2) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 70 ¾ 700 ¾ 0.1 0.25 V 80 ¾ ¾ MHz ¾ 2.0 3.5 pF ...