SI1958DH

www.DataSheet.co.kr Si1958DH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.205 at VGS = 4.5 V 0.340 at VGS = 2.5 V ID (A)a 1.3 a FEATURES Qg (Typ.) 1.2 nC 1.3a Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CC XX YY G1 2 5 G2 Load Switch for Portable Applications D1 D2 D2 3 4 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free) Si1958DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e Symbol VDS VGS Limit 20 ± 12 1.3a 1.3a 1.3a 1.2a Unit V ID A IDM IS 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 PD W TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions...