SI2342DS

www.DataSheet.co.kr New Product Si2342DS Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.017 at VGS = 4.5 V 0.020 at VGS = 2.5 V 8 0.022 at VGS = 1.8 V 0.030 at VGS = 1.5 V 0.075 at VGS = 1.2 V SOT-23 ID (A)a, e 6 6 6 6 6 Qg (Typ.) 6 nC Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Low On-Resistance 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches for Low Voltage Gate Drive Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 V D G 1 3 D Marking Code (3) S 2 F2 XXX Lot Traceability and Date Code G (1) (2) S N-Channel MOSFET Top View Part # Code Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 8 ±5 6e 6e 6e, b, c 5.8b, c 30 2.1 1.1b, c 2.5 1.6 1.3b, c 0.8b, c - 55 to 150 260 W A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Steady State Symbol RthJA RthJF ...