SI3410DV

www.DataSheet.co.kr Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES ID (A)a 8 8 Qg (Typ.) 9.2 nC PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0195 at VGS = 10 V 0.023 at VGS = 4.5 V Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Load Switch Low Current dc-to-dc TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 S AM XXX Lot Traceability and Date Code Part # Code 2.85 mm (4) Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G (3) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 8a 8a 7.5b,c 5.9b,c 30 2.7 1.7b,c 4.1 2.6 2b,c 1.25b,c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 69254 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 1 Datasheet pdf - http://w...