SI3424CDV

www.DataSheet.co.kr Si3424CDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.026 at VGS = 10 V 0.032 at VGS = 4.5 V ID (A)a, b 8 4.2 8 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices DC/DC Converters TSOP-6 Top View D 1 6 D D 3 mm D Marking Code 2 5 D (1, 2, 5, 6) BC G 3 4 S XX YY Lot Traceability and Date Code Part # Code 2.85 mm G (3) (4) S Ordering Information: Si3424CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 8a 7.7 7.2c, d 5.7c, d 20 3 1.7c, d 3.6 2.3 2.0c, d 1.3c, d - 55 to 150 A Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current IDM IS A Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambiente Maximum Junction-to-Foot (Drain) t 5 s Steady State Symbol RthJA RthJF Typical 50 28 Maximum 62.5 35 Unit °C/W Notes: a. Package limited. b. Based on TC = 25 °C. c. Surface mounted on 1" x 1" FR4 board. d. t = 5 s. e. Maxi...