SI3460DDV

www.DataSheet.co.kr Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.028 at VGS = 4.5 V 0.032 at VGS = 2.5 V 0.038 at VGS = 1.8 V ID (A)d 7.9 7.4 6.8 6.7 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View D 1 6 D APPLICATIONS DC/DC Converters Boost Converters Load Switch D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code BA XXX Lot Traceability and Date Code Part # Code G (3) (4) S N-Channel MOSFET G 3 4 S 2.85 mm Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Avalanche Energy TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS IAS EAS ID Symbol VDS VGS Limit 20 ±8 7.9 6.3 6.2a, b 5.0a, b 20 2.2 1.4a, b 8 3.2 2.7 1.7 1.7a, b 1.1a, b - 55 to 150 260 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 61 38 Maximum...