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SI3465DV Dataheets PDF



Part Number SI3465DV
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel MOSFET
Datasheet SI3465DV DatasheetSI3465DV Datasheet (PDF)

www.DataSheet.co.kr Si3465DV New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET ID (A) −4.0 −2.7 rDS(on) (W) 0.080 @ VGS = −10 V 0.170 @ VGS = −4.5 V APPLICATIONS D Load Switch − Notebook PC − Game Machine TSOP-6 Top View 1 3 mm 6 (3) G 2 5 (4) S 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3465DV-T1—E3 (Lead Free) Marking Code: 5C ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Pa.

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www.DataSheet.co.kr Si3465DV New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET ID (A) −4.0 −2.7 rDS(on) (W) 0.080 @ VGS = −10 V 0.170 @ VGS = −4.5 V APPLICATIONS D Load Switch − Notebook PC − Game Machine TSOP-6 Top View 1 3 mm 6 (3) G 2 5 (4) S 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3465DV-T1—E3 (Lead Free) Marking Code: 5C ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "20 Unit V −4.0 −3.2 −20 −1.7 2.0 1.3 −55 to 150 −3.0 −2.4 A −0.95 1.14 0.73 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72787 S-40410—Rev. A, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 52 92 34 Maximum 62.5 110 41 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si3465DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −10 V VGS = −10 V, ID = −4 A VGS = −4.5 V, ID = −2.7 A VDS = −15 V, ID = −4 A IS = −1.7 A, VGS = 0 V −20 0.065 0.140 6 −0.8 −1.2 0.080 0.170 −1.0 −3 "100 −1 −10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −5 V, ID = −4 A 3.5 1.3 1.4 9.5 9 13 19 8 20 15 20 30 15 40 ns W 5.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 7 V 16 I D − Drain Current (A) I D − Drain Current (A) 6V 20 Transfer Characteristics TC = −55_C 16 25_C 125_C 12 12 5V 8 4V 8 4 4 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Document Number: 72787 S-40410—Rev. A, 15-Mar-04 Datasheet pdf - http://www.DataSheet4U.net/ 2 www.DataSheet.co.kr Si3465DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 r DS(on) − On-Resistance ( W ) 400 350 C − Capacitance (pF) 0.4 300 250 200 150 100 50 0.0 0 2 4 6 8 10 0 0 4 8 12 16 20 Crss Coss Ciss Vishay Siliconix Capacitance 0.3 0.2 VGS = 4.5 V VGS = 10 V 0.1 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0.0 VDS = 10 V ID = 4 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4 A 1.2 1.0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.5 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.4 0.3 0.2 ID = 4 A TJ = 25_C 0.1 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72787 S-40410—Rev. A, 15-Mar-04 www.vishay.com 3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si3465DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 40 30 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 92_C/W t1 t2 Single P.


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