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Si3465DV
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
−20
D TrenchFETr Power MOSFET ID (A)
−4.0 −2.7
rDS(on) (W)
0.080 @ VGS = −10 V 0.170 @ VGS = −4.5 V
APPLICATIONS
D Load Switch − Notebook PC − Game Machine
TSOP-6 Top View
1 3 mm 6 (3) G 2 5
(4) S
3
4 (1, 2, 5, 6) D P-Channel MOSFET
2.85 mm Ordering Information: Si3465DV-T1—E3 (Lead Free) Marking Code: 5C
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−20 "20
Unit
V
−4.0 −3.2 −20 −1.7 2.0 1.3 −55 to 150
−3.0 −2.4 A
−0.95 1.14 0.73 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72787 S-40410—Rev. A, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
52 92 34
Maximum
62.5 110 41
Unit
_C/W
1
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Si3465DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −10 V VGS = −10 V, ID = −4 A VGS = −4.5 V, ID = −2.7 A VDS = −15 V, ID = −4 A IS = −1.7 A, VGS = 0 V −20 0.065 0.140 6 −0.8 −1.2 0.080 0.170 −1.0 −3 "100 −1 −10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −5 V, ID = −4 A 3.5 1.3 1.4 9.5 9 13 19 8 20 15 20 30 15 40 ns W 5.5 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 7 V 16 I D − Drain Current (A) I D − Drain Current (A) 6V 20
Transfer Characteristics
TC = −55_C 16 25_C 125_C 12
12
5V
8 4V
8
4
4
0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com
0 0 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Document Number: 72787 S-40410—Rev. A, 15-Mar-04
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Si3465DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.5 r DS(on) − On-Resistance ( W ) 400 350 C − Capacitance (pF) 0.4 300 250 200 150 100 50 0.0 0 2 4 6 8 10 0 0 4 8 12 16 20 Crss Coss Ciss
Vishay Siliconix
Capacitance
0.3
0.2
VGS = 4.5 V VGS = 10 V
0.1
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0.0 VDS = 10 V ID = 4 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 4 A
1.2
1.0
0.8
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.6 −50
−25
0
25
50
75
100
125
150
Qg − Total Gate Charge (nC)
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 0.5
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
TJ = 150_C 10
r DS(on) − On-Resistance ( W )
0.4
0.3
0.2
ID = 4 A
TJ = 25_C
0.1
1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 72787 S-40410—Rev. A, 15-Mar-04
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si3465DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 50
Single Pulse Power
0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2
40
30
0.0
20
−0.2
10
−0.4 −50
−25
0
25
50
75
100
125
150
0 10−3
10−2
10−1
1
10
100
600
TJ − Temperature (_C)
Time (sec)
100
Safe Operating Area
rDS(on) Limited IDM Limited
10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 92_C/W
t1 t2
Single P.