SI4104DY

New Product N-Channel 100-V (D-S) MOSFET Si4104DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.105 at VGS = 10 V ID (A)a 4.6 Qg (Typ.) 8.5 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Frequency DC/DC Converter High Frequency Boost Converter LED Backlight for LCD TV D G Ordering Information: Si4104DY-T1-E3 (Lead (Pb)-free) Si4104DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 100 ± 20 4.6 3.7 3.2b, c 2.6b, c 15 4.1 2.0b, c 9 4 5.0 3.2 2.5b, c 1.6b, c - 55 to 150 S N-Channel MOSFET Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State co...