SI4116DY

www.vishay.com Si4116DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET SO-8 Single D D5 D6 D7 8 4 3G 2S 1S S Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) a Configuration 25 0.0086 0.0095 0.0115 17.5 18 Single FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous buck D - Low side Available G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free SO-8 Si4116DY-T1-E3 Si4116DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current Continuous source-drain diode current TC = 25 °C TA = 25 °C Single pulse avalanche current Avalanche energy L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d Maximum junction-to-foot (drain) t  10 s Steady state Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 95 °C/W SYMBOL RthJA RthJF TYPICAL 43 19 LIMIT 25 ± 12 ...