SI4124DY

www.DataSheet.co.kr New Product Si4124DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0075 at VGS = 10 V 0.009 at VGS = 4.5 V ID (A)d 20.5 21 nC 18.7 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G Synchronous Rectification DC/DC D Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free) Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit 40 ± 20 20.5 16.4 13.6a, b 10.9a, b 50 33 54 4.7 2.1a, b 5.7 3.6 2.5a, b 1.6a, b - 55 to 150 °C W mJ A A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. Document Number: 68601 S09-0392-Rev. ...