N-Channel MOSFET. SI4156DY Datasheet

SI4156DY MOSFET. Datasheet pdf. Equivalent

Part SI4156DY
Description N-Channel MOSFET
Feature www.DataSheet.co.kr Si4156DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY.
Manufacture Vishay Siliconix
Datasheet
Download SI4156DY Datasheet

www.DataSheet.co.kr Si4156DY Vishay Siliconix N-Channel 30 SI4156DY Datasheet
Recommendation Recommendation Datasheet SI4156DY Datasheet





SI4156DY
www.DataSheet.co.kr
N-Channel 30-V (D-S) MOSFET
Si4156DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.006 at VGS = 10 V
30
0.008 at VGS = 4.5 V
ID (A)a
24
21
Qg (Typ.)
12 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4156DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
- Notebook Vcore
- POL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
24
19
15.7b, c
12.5b, c
70
35
61
5
2.1b, c
6
3.8
2.5b, c
1.6b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 81 °C/W.
Symbol
RthJA
RthJF
Typical
37
17
Maximum
50
21
Unit
V
A
mJ
A
W
°C
Unit
°C/W
Document Number: 64822
S09-1220-Rev. A, 29-Jun-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



SI4156DY
www.DataSheet.co.kr
Si4156DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
RDS(on)
gfs
VGS = 10 V, ID = 15.7 A
VGS = 4.5 V, ID = 13.2 A
VDS = 15 V, ID = 15.7 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 19 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 19 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.15
50
0.2
Typ. Max. Unit
24
-6
0.0048
0.0064
82
2.2
± 100
1
5
0.006
0.008
V
mV/°C
V
nA
µA
A
Ω
S
1700
350
140
28
12
5.4
4.6
1.2
25
20
25
15
12
10
25
10
42
21
2.4
40
30
40
25
20
15
40
15
pF
nC
Ω
ns
30
A
70
0.8 1.2
V
25 50 ns
17 35 nC
13
ns
12
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64822
S09-1220-Rev. A, 29-Jun-09
Datasheet pdf - http://www.DataSheet4U.net/





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