Document
Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
■ Features
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
• High transition frequency fT • Mini type package, allowing downsizing of the equipment and
5˚
automatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
(0.65)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
0 to 0.1 1.1–+00..12 1.1–+00..13
V
a e cle con Collector current
IC
50
mA
lifecy , dis Collector power dissipation
PC
150
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
Marking Symbol: R
1: Base 2: Emitter 3: Collector JEITA: SC-59A Mini3-G1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
inc typ Collector-base voltage (Emitter open)
c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage
/Dis ma Forward current transfer ratio
D ance type, Transition frequency *
ten ce Reverse transfer capacitance ain nan (Common base)
VCBO VEBO VBE hFE
fT Crb
IC = 100 µA, IE = 0
30
IE = 10 µA, IC = 0
3
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
25
VCB = 10 V, IE = −15 mA, f = 200 MHz 800
VCE = 6 V, IC = 0, f = 1 MHz
720
1 300 0.8
250 1 600
V V mV MHz pF
M inte Reverse transfer capacitance ma (Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.0 1.5
pF
ned Power gain
GP VCB = 10 V, IE = −1 mA, f = 200 MHz
20
dB
(pla Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
T
S
No-rank
fT
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
Publication date: June 2006
SJC00116CED
1
2SC2480
Collector power dissipation PC (mW)
Base current IB (µA)
PC Ta
240 200 160 120
IC VCE
IC IB
24
24
Ta = 25°C
IB = 300 µA
20
20
VCE = 10 V Ta = 25°C
250 µA
16
16
200 µA
12
150 µA
12
Collector current IC (mA)
Collector current IC (mA)
80
8
100 µA
8
40
0
0
40
80
120
160
Ambient temperature Ta (°C)
4
50 µA
0
0
4
8
12
16
Collector-emitter voltage VCE (V)
4
0 0 100 200 300 400 500 Base current IB (µA)
Collector current IC (mA)
e/ pe) IB VBE c ty 400
n d ge. ed VCE=10V
ta u Ta = 25°C s tin 350
a e cycle iscon 300
life d, d 250
n uroduct d type 200 te tin urP tinue 150
ing fo iscon 100
in n follow nedd 50
des , pla 0
a o clu pe 0 0.4 0.8 1.2 1.6 2.0 c d in e ty Base-emitter voltage VBE (V)
IC VBE
60
25°C
VCE = 10 V
50
Ta = 75°C
−25°C
40
30
20
10
0 0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
Forward current transfer ratio hFE
hFE IC
240 VCE = 10 V
200
160
Ta = 75°C
120
25°C
−25°C 80
40
0
0.1
1
10
100
Collector current IC (mA)
M is/Discontimnuaeintenanc VCE(sat) IC
ce pe, 100
IC / IB = 10
DMaintenteannance ty 10
ned main 1 (pla Ta = 75°C
1 600 1 400 1 200 1 000
800 600
fT IE
VCB = 10 V Ta = 25°C
Cre
(pF)
Cre VCE
2.4 IC = 1 mA f = 10.7 MHz
2.0
Ta = 25°C
1.6
1.2
0.8
25°C
0.1
400
Reverse transfer capacitance (Common emitter)
Transition frequency fT (MHz)
–25°C
0.4
200
0.01
0.1
1
10
100
Collector current IC (mA)
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
0
0.1
1
10
100
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
2
SJC00116CED
Reverse transfer impedance Zrb (Ω)
Input susceptance bib (mS)
2SC2480
Zrb IE
120 VCB = 10 V f = 2 MHz
100
Ta = 25°C
80
GP IE
NF IE
40
12
VCB = 10 V
VCB = 10 V
35
f = 100 MHz
Rg = 50 Ω
10
f = 100 MHz Rg = 50 kΩ
Ta = 25°C
Ta = 25°C
30
8 25
Noise figure NF (dB)
Power gain GP (dB)
60
20
6
15
40
4
10
20
0
− 0.1
−1
−10
Emitter current IE (mA)
5
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
2
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
e/ pe) bib gib c . ty 0
n d ge ed yib = gib + jbib
sta tinu VCB = 10 V le n −10
Forward transfer susceptance bfb (mS)
Reverse transfer susceptance brb (mS)
a elifecyc , disco −20
IE = −2 mA
n u ct ped f=900MHz
te tin Produuedty −30 −5mA
600 500
four ontin −40
300 200
in n llowing ddisc −50
a o ludes foe, plane −60 c d inc e typ 0
10 20 30 40 50 Input conductance gib (mS)
brb grb
0 − 0.4
yrb = grb + jbrb VCB = 10 V
200 300 500
− 0.8 600
−1.2 f = 900 MHz
−2 mA
−1.6
IE = −5 mA
−2.0
−2..