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2SC2480 Dataheets PDF



Part Number 2SC2480
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC2480 Datasheet2SC2480 Datasheet (PDF)

Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm ■ Features 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit .

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Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm ■ Features 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C Marking Symbol: R 1: Base 2: Emitter 3: Collector JEITA: SC-59A Mini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-base voltage (Emitter open) c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage /Dis ma Forward current transfer ratio D ance type, Transition frequency * ten ce Reverse transfer capacitance ain nan (Common base) VCBO VEBO VBE hFE fT Crb IC = 100 µA, IE = 0 30 IE = 10 µA, IC = 0 3 VCB = 10 V, IE = −2 mA VCB = 10 V, IE = −2 mA 25 VCB = 10 V, IE = −15 mA, f = 200 MHz 800 VCE = 6 V, IC = 0, f = 1 MHz 720 1 300 0.8 250 1 600 V V mV  MHz pF M inte Reverse transfer capacitance ma (Common emitter) Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.0 1.5 pF ned Power gain GP VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB (pla Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank T S No-rank fT 800 to 1 400 1 000 to 1 600 800 to 1 600 Marking symbol RT RS R Product of no-rank is not classified and have no indication for rank. Publication date: June 2006 SJC00116CED 1 2SC2480 Collector power dissipation PC (mW) Base current IB (µA) PC  Ta 240 200 160 120 IC  VCE IC  IB 24 24 Ta = 25°C IB = 300 µA 20 20 VCE = 10 V Ta = 25°C 250 µA 16 16 200 µA 12 150 µA 12 Collector current IC (mA) Collector current IC (mA) 80 8 100 µA 8 40 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 50 µA 0 0 4 8 12 16 Collector-emitter voltage VCE (V) 4 0 0 100 200 300 400 500 Base current IB (µA) Collector current IC (mA) e/ pe) IB  VBE c ty 400 n d ge. ed VCE=10V ta u Ta = 25°C s tin 350 a e cycle iscon 300 life d, d 250 n uroduct d type 200 te tin urP tinue 150 ing fo iscon 100 in n follow nedd 50 des , pla 0 a o clu pe 0 0.4 0.8 1.2 1.6 2.0 c d in e ty Base-emitter voltage VBE (V) IC  VBE 60 25°C VCE = 10 V 50 Ta = 75°C −25°C 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) Forward current transfer ratio hFE hFE  IC 240 VCE = 10 V 200 160 Ta = 75°C 120 25°C −25°C 80 40 0 0.1 1 10 100 Collector current IC (mA) M is/Discontimnuaeintenanc VCE(sat)  IC ce pe, 100 IC / IB = 10 DMaintenteannance ty 10 ned main 1 (pla Ta = 75°C 1 600 1 400 1 200 1 000 800 600 fT  IE VCB = 10 V Ta = 25°C Cre (pF) Cre  VCE 2.4 IC = 1 mA f = 10.7 MHz 2.0 Ta = 25°C 1.6 1.2 0.8 25°C 0.1 400 Reverse transfer capacitance (Common emitter) Transition frequency fT (MHz) –25°C 0.4 200 0.01 0.1 1 10 100 Collector current IC (mA) 0 − 0.1 −1 −10 −100 Emitter current IE (mA) 0 0.1 1 10 100 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) 2 SJC00116CED Reverse transfer impedance Zrb (Ω) Input susceptance bib (mS) 2SC2480 Zrb  IE 120 VCB = 10 V f = 2 MHz 100 Ta = 25°C 80 GP  IE NF  IE 40 12 VCB = 10 V VCB = 10 V 35 f = 100 MHz Rg = 50 Ω 10 f = 100 MHz Rg = 50 kΩ Ta = 25°C Ta = 25°C 30 8 25 Noise figure NF (dB) Power gain GP (dB) 60 20 6 15 40 4 10 20 0 − 0.1 −1 −10 Emitter current IE (mA) 5 0 − 0.1 −1 −10 −100 Emitter current IE (mA) 2 0 − 0.1 −1 −10 −100 Emitter current IE (mA) e/ pe) bib  gib c . ty 0 n d ge ed yib = gib + jbib sta tinu VCB = 10 V le n −10 Forward transfer susceptance bfb (mS) Reverse transfer susceptance brb (mS) a elifecyc , disco −20 IE = −2 mA n u ct ped f=900MHz te tin Produuedty −30 −5mA 600 500 four ontin −40 300 200 in n llowing ddisc −50 a o ludes foe, plane −60 c d inc e typ 0 10 20 30 40 50 Input conductance gib (mS) brb  grb 0 − 0.4 yrb = grb + jbrb VCB = 10 V 200 300 500 − 0.8 600 −1.2 f = 900 MHz −2 mA −1.6 IE = −5 mA −2.0 −2..


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