2SC2498

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 20 3 50 25 300 125 -55~125 Unit V V V mA mA mW °C °C 2SC2498 Unit: mm Microwave Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA, f = 500 MHz VCE = 10 V, IC = 10 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit ¾ 3.5 ¾ GHz ¾ 14.5 ¾ ¾9¾ dB ¾ 2.5 ¾ dB ¾4¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 30 ¾ ¾ ¾ ¾ 80 1.15 0.75 1 1 300 ¾ ¾ mA mA pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 2SC2498 2 2003-03-19 2SC2498 3 2003-03-19 Common Emitter Small Signal S-Parameters of 2SC2498...