SI4838BDY

www.DataSheet.co.kr New Product Si4838BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0027 at VGS = 4.5 V 0.0032 at VGS = 2.5 V 0.0040 at VGS = 1.8 V ID (A)a 34 31 28 33 nC Qg (Typ.) FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS Low VIN DC/DC SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D G D D S Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 12 ±8 34 27 22.5b, c 18.0b, c 70 5.1 2.2b, c 20 20 5.7 3.6 2.50b, c 1.6b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68964 S-82662-Rev. A, 03-Nov-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ Symbol t ≤ 10 s Steady State RthJA ...