SI4936CDY

www.DataSheet.co.kr New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.040 at VGS = 10 V 0.050 at VGS = 4.5 V ID (A)d 5.8 2.8 nC 5.5 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET APPLICATIONS Low Current DC/DC Conversion Notebook System Power SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 D1 D2 G1 G2 S1 Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 5.8 4.6 5.0a, b 4.0a, b 20 1.9 1.4a, b 2.3 1.5 1.7a, b 1.1a, b - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, c t ≤ 10 s Steady State Symbol RthJA RthJF Typical 58 42 Maximum 75 55 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 110 °C/W. d. Based on TC = 25 °C. Document Number: 69097 S09-0390-Rev. C, 09-Mar-09 www.vishay.com 1 Datasheet pdf ...