SI4946BEY

www.DataSheet.co.kr Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.041 at VGS = 10 V 0.052 at VGS = 4.5 V ID (A) 6.5 5.8 Qg (Typ.) 9.2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 175 °C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/95/EC SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free) Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0 1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 60 ± 20 6.5 5.5 5.3a, b 4.4a, b 30 3.1 2a, b 12 7.2 3.7 2.6 2.4a, b 1.7a, b - 55 to 175 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, c Symbol t ≤ 10 s Steady State RthJA RthJF Typical 50 33 Maximum 62.5 41 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Rework Conditions: manual solderi...