SI5441DC

www.DataSheet.co.kr Si5441DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = −4.5 V −20 0.06 @ VGS = −3.6 V 0.083 @ VGS = −2.5 V FEATURES ID (A) −5.3 −5.1 −4.3 11 Qg (Typ) D TrenchFETr Power MOSFET D 2.5-V Rated Pb-free Available 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BA XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441DC Si5441DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "12 Unit V −5.3 −3.8 −20 −2.1 2.5 1.3 −55 to 150 260 −3.9 −2.8 −1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip ...