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Si5445BDC
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.033 @ VGS = −4.5 V −8 0.043 @ VGS = −2.5 V 0.060 @ VGS = −1.8 V
FEATURES
ID (A)
−7.1 −6.2 −5.3 14
Qg (Typ)
D TrenchFETr Power MOSFET
1206-8 ChipFETr
1
D D D D S D D G
S
G Marking Code BM XX Lot Traceability and Date Code
Part # Code Bottom View
D P-Channel MOSFET
Ordering Information: Si5445BDC-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−8 "8
Unit
V
−7.1 −5.2 "20 −2.1 2.5 1.3 −55 to 150 260
−5.2 −3.7 −1.1 1.3 0.7 W _C A
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
45 85 17
Maximum
50 95 20
Unit
_C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73251 S-50133—Rev. A, 24-Jan-05 www.vishay.com
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Si5445BDC
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source Drain Source On On-State State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −8 V, VGS = 0 V VDS = −8 V, VGS = 0 V, TJ = 85_C VDS p−5 V, VGS = −4.5 V VGS = −4.5 V, ID = −5.2 A VGS = −2.5 V, ID = −4.5 A VGS = −1.8 V, ID = −1.7 A VDS = −5 V, ID = −5.2 A IS = −1.1 A, VGS = 0 V −20 0.027 0.035 0.050 18 −0.8 −1.2 0.033 0.043 0.060 S V W −0.45 −1.0 "100 −1 −5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = −1.1 11A A, di/dt = 100 A/ms VDD = −4 V, RL = 4 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −4 V, VGS = −4.5 V, ID = −5.2 A 14 1.8 3.3 8 12 22 75 50 75 40 20 35 115 75 115 60 nC ns W 21 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 5 thru 2.5 V 16 I D − Drain Current (A) I D − Drain Current (A) 2V 16 20 TC = −55_C 25_C 125_C 12
Transfer Characteristics
12
8
1.5 V
8
4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
4
0 0.0
0.5
1.0
1.5
2.0
2.5
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 73251 S-50133—Rev. A, 24-Jan-05
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Si5445BDC
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16 r DS(on) − On-Resistance ( W ) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 8 12 16 20 VGS = 4.5 V 0 0 1 2 3 4 5 6 7 8 VGS = 1.8 V VGS = 2.5 V C − Capacitance (pF) 1600 Ciss 1200 2000
Vishay Siliconix
Capacitance
800 Coss 400 Crss
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 5.2 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 5.2 A
3
1.2
2
1.0
1
0.8
0 0 3 6 9 12 15 18 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0
On-Resistance vs. Gate-to-Source Voltage
ID = 2 A ID = 5.2 A
TJ = 25_C
1
2
3
4
5
VSD − Source-to-Drain .