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SI5445BDC Dataheets PDF



Part Number SI5445BDC
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel MOSFET
Datasheet SI5445BDC DatasheetSI5445BDC Datasheet (PDF)

www.DataSheet.co.kr Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.033 @ VGS = −4.5 V −8 0.043 @ VGS = −2.5 V 0.060 @ VGS = −1.8 V FEATURES ID (A) −7.1 −6.2 −5.3 14 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BM XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5445BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED).

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www.DataSheet.co.kr Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.033 @ VGS = −4.5 V −8 0.043 @ VGS = −2.5 V 0.060 @ VGS = −1.8 V FEATURES ID (A) −7.1 −6.2 −5.3 14 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BM XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5445BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −8 "8 Unit V −7.1 −5.2 "20 −2.1 2.5 1.3 −55 to 150 260 −5.2 −3.7 −1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 85 17 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73251 S-50133—Rev. A, 24-Jan-05 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si5445BDC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source Drain Source On On-State State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −8 V, VGS = 0 V VDS = −8 V, VGS = 0 V, TJ = 85_C VDS p−5 V, VGS = −4.5 V VGS = −4.5 V, ID = −5.2 A VGS = −2.5 V, ID = −4.5 A VGS = −1.8 V, ID = −1.7 A VDS = −5 V, ID = −5.2 A IS = −1.1 A, VGS = 0 V −20 0.027 0.035 0.050 18 −0.8 −1.2 0.033 0.043 0.060 S V W −0.45 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = −1.1 11A A, di/dt = 100 A/ms VDD = −4 V, RL = 4 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −4 V, VGS = −4.5 V, ID = −5.2 A 14 1.8 3.3 8 12 22 75 50 75 40 20 35 115 75 115 60 nC ns W 21 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D − Drain Current (A) I D − Drain Current (A) 2V 16 20 TC = −55_C 25_C 125_C 12 Transfer Characteristics 12 8 1.5 V 8 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 73251 S-50133—Rev. A, 24-Jan-05 Datasheet pdf - http://www.DataSheet4U.net/ 2 www.DataSheet.co.kr Si5445BDC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.16 r DS(on) − On-Resistance ( W ) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 8 12 16 20 VGS = 4.5 V 0 0 1 2 3 4 5 6 7 8 VGS = 1.8 V VGS = 2.5 V C − Capacitance (pF) 1600 Ciss 1200 2000 Vishay Siliconix Capacitance 800 Coss 400 Crss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 5.2 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.2 A 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 15 18 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 2 A ID = 5.2 A TJ = 25_C 1 2 3 4 5 VSD − Source-to-Drain .


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