SI5456DU

www.DataSheet.co.kr Si5456DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.010 at VGS = 10 V 0.0135 at VGS = 4.5 V ID (A)a 12 12 Qg (Typ.) 9.8 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK ChipFET Single 1 2 D D D D D D G S S 3 4 Marking Code AC XXX Lot Traceability and Date Code Part # Code D APPLICATIONS Load Switch DC/DC G 8 7 6 5 Bottom View S N-Channel MOSFET Ordering Information: Si5456DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 20 ± 20 12a 12a 12a, b, c 10.8b, c 50 12a 2.6b, c 31 20 3.1b, c 2b, c - 55 to 150 260 W A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t≤5s Symbol RthJA Typical 34 Maximum 40 Unit °C/W RthJC 3 4 Steady State Maximum Junction-to-Case (Drain) N...