N-Channel MOSFET
New Product
N-Channel 60-V (D-S) MOSFET
Si5476DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) 0.034 at VG...
Description
New Product
N-Channel 60-V (D-S) MOSFET
Si5476DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) 0.034 at VGS = 10 V 0.041 at VGS = 4.5 V
PowerPAK ChipFET Single
ID (A)a 12 12
Qg (Typ.) 10.5 nC
1
2 Marking Code
D3
DD
4
8D 7D
6S
D G
S
AA XXX
Lot Traceability and Date Code
Part # Code
5
FEATURES
Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK®
ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
APPLICATIONS
Load Switch for Portable Applications
DC-DC Switch for Low Power Synchronous Rectification
Intermediate Switch Driver for DC/DC Applications
G
RoHS
COMPLIANT
D
Bottom View
S
Ordering Information: Si5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
ID
IDM IS IAS EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
PD TJ, Tstg
Limit
60
± 20 12a 12a 7b, c 5.6b, c 25 12a 2.6b, c 15
11.2
31
20 3.1b, c 2b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
...
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